Tools / Parts and analysis / REDW data

Radiation test distributions by device class

Pick a part grade, a span of publication years and the device classes you care about, and read the share of tested parts that passed each total dose, latchup LET and displacement damage fluence. Burnout and gate rupture in power devices, percentiles by device type and the part-by-part list are one tab away.

2026 Full-CorpusIEEE Radiation Effects Data Workshop & RADECS REDW 1992–2025, plus anonymized internal test recordsSurvival ECDF, right-censored pass dataHelp & Reference

2,143

Source Documents

13,588

Measured Records

3,054

Parts in Distributions

1,739

TID Entries

1,337

SEL Entries

432

DD Entries

559

SEB/SEGR Rows

Disclaimer: The radiation test data presented here was extracted from publicly available IEEE Radiation Effects Data Workshop (REDW) and RADECS REDW publications using automated methods and has not been independently validated. Users are solely responsible for reviewing the referenced source publications to verify the applicability, accuracy, and completeness of all radiation test results before use in any design, analysis, or qualification activity. Space RHA assumes no liability for decisions made based on this data.

Part grade

Rad-Hard/Space: 432 records (233 w/TID, 179 w/SEL, 252 w/DD) | COTS: 7602 records (2100 w/TID, 1791 w/SEL, 2071 w/DD)

Publication years 1981 – 2026

1981

2026

Drag sliders to filter by publication year, earlier years ≈ older process nodes

TID threshold Off

0 2000

Set minimum TID pass level (krad), reference line on TID chart, filters Parts List

DD threshold Off

10⁸ 10¹⁷

Set minimum DD fluence (n/cm²), reference line on DD chart, filters Parts List

Fraction of tested devices confirmed functional at or above each TID level.

Total Ionizing Dose (TID) Hardness: Survival Distribution All Parts

Showing All Parts: COTS, Mil/Hi-Rel and Rad-Hard/Space/QML together (the COTS and Rad-Hard filters leave the Mil/Hi-Rel parts out). Use grade buttons and year slider above, or device-type chips below, to filter.

Fraction of tested devices confirmed functional at or above each TID level (log x-axis). Right-censored survival data, actual failure thresholds may be higher than the tested levels shown.

SEL Immunity: LET Threshold Distribution All Parts

Showing All Parts: COTS, Mil/Hi-Rel and Rad-Hard/Space/QML together (the COTS and Rad-Hard filters leave the Mil/Hi-Rel parts out).

Fraction of tested devices confirmed SEL-immune at or above each LET level. Values near 120 MeV·cm²/mg often represent the maximum available facility LET.

Displacement Damage (DD): 1 MeV Neutron Equiv. Fluence Distribution All Parts

Fraction of tested devices surviving at or above each 1 MeV neutron equivalent fluence level (n/cm², log x-axis). Extracted from 833 papers across REDW, TNS, and RADECS proceedings. Right-censored, actual damage thresholds may be higher.

SEB / SEGR: Destructive SEE in Power Devices

Dashed lines show 75% (EEE-INST-002 derating) and 50% (Casey recommended derating) of rated voltage. Each row is placed in a technology class from the device and process its source gives; integrated circuits (regulators, converters, amplifiers, processors) start switched off, since these derating lines are the power transistor ones. A row needs both a rated and a failure voltage to be placed, and points beyond LET 120 or 130 percent of rating are drawn hollow at the edge.

Threshold voltages for Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) in power MOSFETs, diodes, and SiC devices, plotted as percentage of rated voltage vs. LET. Data from published IEEE REDW and RADECS REDW papers (1992–2025); no internal records are used in this chart.

Summary Statistics by Device Type All Parts

Percentile statistics (full year range). Switch grade above to compare populations.

Device Type	N Records	N TID	TID P10 (krad)	TID Median	TID P90	N SEL	SEL P10 (MeV·cm²/mg)	SEL Median	SEL P90	N DD	DD P10 (n/cm²)	DD Median	DD P90
BJT	361	182	8	60	300	46	49	86	120	149	3.2e+11	2.0e+14	4.5e+14
Op-Amp	751	294	8	30	300	229	8	77	120	260	1.0e+11	1.2e+12	2.7e+14
Comparator	193	42	8	100	100	30	55	120	120	107	1.0e+11	1.2e+13	5.0e+15
Voltage Ref	184	114	10	100	200	34	59	75	86	74	1.0e+11	1.0e+13	2.7e+14
Linear Reg	353	176	8	100	300	138	60	86	120	183	1.0e+11	1.0e+14	4.5e+15
Power Converter	374	158	8	42	300	152	15	80	120	126	1.0e+11	1.0e+12	2.7e+14
ADC	355	154	8	30	300	202	31	80	120	116	1.5e+11	1.0e+12	1.1e+13
DAC	85	20	5	8	100	24	6	90	120	18	3.5e+11	1.8e+12	4.0e+15
FPGA	388	82	8	49	1000	110	3	80	120	117	3.1e+11	2.0e+13	5.0e+14
MOSFET	288	44	2	50	318	81	39	86	120	130	1.0e+11	1.0e+13	1.0e+16
Optocoupler	166	29	10	200	300	12	61	120	120	126	3.5e+11	2.0e+12	7.0e+12
SRAM	194	48	2	2	100	40	0	3	110	57	2.8e+09	6.0e+10	3.0e+12
Flash	115	44	11	100	400	32	11	56	120	30	1.0e+09	4.2e+11	7.2e+13
Logic / Interface	153	64	1	12	100	63	30	75	120	30	1.0e+09	9.4e+11	3.2e+14
MCU / Processor	146	67	2	20	300	50	14	62	125	36	6.1e+10	2.3e+11	3.0e+12
Sensor	66	36	7	35	120	15	12	93	120	24	1.0e+11	2.3e+11	2.0e+12
Diode	92	15	2	12	168	60	61	86	120	35	1.0e+09	1.0e+11	3.1e+14
Solar Cell	55	0	,	,	,	0	,	,	,	55	2.0e+12	1.0e+13	6.8e+13
Other	3,745	780	4	75	410	655	14	86	120	662	1.0e+10	1.4e+12	2.0e+14
BJT	332	166	8	60	300	41	59	86	120	138	3.4e+11	2.0e+14	4.5e+14
Op-Amp	700	265	8	30	293	212	8	70	120	234	1.0e+11	1.2e+12	2.7e+14
Comparator	169	34	8	100	100	25	55	120	120	88	1.0e+11	1.2e+13	5.0e+15
Voltage Ref	146	82	4	70	200	23	59	59	84	44	6.5e+10	8.0e+12	3.0e+13
Linear Reg	187	80	3	25	150	55	50	78	120	80	1.0e+11	1.0e+12	5.0e+15
Power Converter	340	135	8	33	100	139	14	80	120	113	1.0e+11	1.0e+12	3.8e+14
ADC	340	143	8	30	300	192	16	80	120	108	1.5e+11	1.0e+12	1.2e+13
DAC	85	20	5	8	100	24	6	90	120	18	3.5e+11	1.8e+12	4.0e+15
FPGA	375	78	8	44	1000	102	3	73	120	110	3.1e+11	6.5e+13	5.0e+14
MOSFET	285	43	2	50	320	81	39	86	120	130	1.0e+11	1.0e+13	1.0e+16
Optocoupler	166	29	10	200	300	12	61	120	120	126	3.5e+11	2.0e+12	7.0e+12
SRAM	186	44	2	2	64	34	0	2	108	51	2.8e+09	5.0e+10	3.0e+12
Flash	115	44	11	100	400	32	11	56	120	30	1.0e+09	4.2e+11	7.2e+13
Logic / Interface	141	61	1	10	100	56	30	82	120	27	1.0e+09	1.0e+12	3.6e+14
MCU / Processor	144	65	1	14	300	48	14	62	125	36	6.1e+10	2.3e+11	3.0e+12
Sensor	63	33	6	30	120	12	12	93	120	24	1.0e+11	2.3e+11	2.0e+12
Diode	92	15	2	12	168	60	61	86	120	35	1.0e+09	1.0e+11	3.1e+14
Solar Cell	36	0	,	,	,	0	,	,	,	36	1.5e+12	1.5e+13	1.0e+14
Other	3,700	763	4	75	480	643	14	86	120	643	1.0e+10	1.2e+12	2.0e+14
BJT	11	4	47	150	150	3	80	80	80	10	2.7e+11	5.0e+13	1.0e+14
Op-Amp	46	26	30	100	300	17	8	91	120	21	3.0e+11	1.0e+14	4.5e+14
Comparator	24	8	10	75	300	5	120	120	120	19	1.0e+11	1.0e+14	2.7e+14
Voltage Ref	36	32	10	100	300	11	86	86	86	28	3.0e+11	1.0e+14	2.7e+14
Linear Reg	165	96	30	100	300	83	78	86	86	102	3.0e+11	1.0e+14	1.0e+14
Power Converter	34	23	23	300	300	13	75	86	120	13	3.0e+11	3.0e+12	2.7e+14
ADC	13	11	50	75	100	9	50	86	32905	6	1.0e+13	1.0e+13	1.0e+13
DAC	0	0	,	,	,	0	,	,	,	0	,	,	,
FPGA	13	4	300	625	950	8	105	120	120	7	6.0e+11	1.0e+12	1.0e+12
MOSFET	3	1	100	100	100	0	,	,	,	0	,	,	,
Optocoupler	0	0	,	,	,	0	,	,	,	0	,	,	,
SRAM	8	4	91	100	240	6	10	106	116	6	1.0e+11	1.0e+11	6.0e+12
Flash	0	0	,	,	,	0	,	,	,	0	,	,	,
Logic / Interface	12	3	50	50	50	7	69	70	103	3	8.9e+11	8.9e+11	8.9e+11
MCU / Processor	2	2	100	100	100	2	113	113	113	0	,	,	,
Sensor	3	3	100	100	100	3	76	76	90	0	,	,	,
Diode	0	0	,	,	,	0	,	,	,	0	,	,	,
Solar Cell	19	0	,	,	,	0	,	,	,	19	1.0e+13	1.0e+13	2.0e+13
Other	43	16	9	100	300	12	38	114	120	18	8.8e+10	1.0e+14	1.5e+14

Parts List: Filtered Results All Parts

Part numbers matching current filters (grade, year range, device type, TID threshold). Click column headers to sort. Use filters above and device chips on TID/SEL tabs to refine.

Showing All Parts with TID data. Set a TID threshold above to filter by minimum pass level.

Part Number	Device Type	TID (krad)	SEL LET	DD (n/cm²)	Year	Grade	Source

TID entries in view

SEL entries in view

DD entries in view

Share passing the TID threshold

Off

no TID threshold set

Share passing the DD threshold

Off

no DD threshold set

How to read it

Interpreting the survival curves

Each point is a tested part

Every point is one part at the level it was reported to pass: a total dose in krad, an LET with no latchup, or a 1 MeV neutron equivalent fluence.

The curve shows the fraction reaching each test level

At each level the curve gives the fraction of the parts in view that passed that level or more. It starts at 100 percent and steps down at each part's reported level.

Real limits are often higher

Most tests stop at a facility limit or at the program requirement with the part still working, so each curve is a lower bound on hardness. A pile-up near 120 MeV·cm²/mg generally means clean to the facility limit.

Where the data come from published papers and anonymized internal records

These distributions combine measured results from published IEEE REDW and RADECS REDW papers (1992–2025, source-linked) with additional anonymized internal test records. Only measured results are used; vendor claims and aggregate summary values are excluded. Internal records improve the population statistics but are identified only as “Internal”, with no part identity or source attribution. Use the source links before relying on an individual published result.

Grade groups: COTS are commercial parts with no mil/space designator; Rad-Hard / Space / QML covers ISL7xxx, RH-prefix, -SP, SEH/SRH, XQR, RTAX, TPS7H and QML-qualified parts. All Parts also includes the Mil/Hi-Rel parts, which the two grade filters leave out.

Download and copy the parts list

Download CSV saves the Parts List as filtered and sorted on the page, with part number, device type, TID (krad), SEL LET (MeV-cm2/mg), DD (n/cm²), year, grade and source for each part. Copy to Clipboard puts the same text on the clipboard. Nothing is stored in the browser.

The help page explains the survival curves, the censoring, the percentiles, the filters and the limits of the data.Open the help page

Single events

Latchup and burnout

Dose and damage

Beam and test

Parts and analysis