Beam
Geometry & Target
Rotating layers use path length t/cosθ. Effective LET = surface LET / cosθ.
Layer stack (beam → device)
| # | Material | Thick | Unit | Rotθ |
|---|
Facility degraders:
Degrader solver (toward Bragg peak)
Result at device surface
Surface LET (target)
—
MeV·cm²/mg
Effective LET (θ)
—
MeV·cm²/mg
Exit energy
—
MeV/u
Residual range (target)
—
µm
Per-layer transport
| Layer | Eff. thick [mm] | Entry E [MeV/u] | Exit E [MeV/u] | Entry LET | Exit LET | Resid. range in layer [mm] |
|---|
Facility finder — inverse search
Define the device overlayers above the sensitive volume, an effective-LET window, a minimum residual range in the SV, and a minimum air gap. The finder sweeps every facility / cocktail ion across angle, degrader, and air gap, and lists what can meet the spec. Overlayers rotate with the part. Configurations degraded past the Bragg peak (ion arrives below the peak energy — ambiguous LET, short range, severe straggling) are rejected by default.
Device overlayers (above SV)
| # | Material | Thick | Unit |
|---|
| Facility | Ion | E [MeV/u] | Angle | Degrader | Air [mm] | Eff LET | Surf LET | Range [µm] | E@SV [MeV/u] | Peak side | Achievable eff-LET span |
|---|