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Alpha Law Directional SEU Tool

Help & User Guide

Preliminary analysis aid. Check the result against your own analysis and, where needed, a test on the intended part. Full disclaimer.

1. What this tool does

Conventional heavy ion rate prediction tilts the beam, converts the tilt to an effective LET with the cosine law, fits a Weibull to the result, and integrates. The cosine law assumes the sensitive volume is a thin sheet. For a FinFET, and for any element whose sensitive volume is taller than it is wide, that assumption fails, and it fails differently along the two die axes. This tool fits Edmonds' alpha law instead, which replaces the cosine with a two parameter shape function, recovers the normal incidence curve the law implies, shows how far and in which direction the data depart from the cosine law, and computes the on orbit rate by direct integration of the directionally averaged cross section, with bootstrap confidence intervals and a set of quality checks.

Status: for FinFETs this is one possible approach, not a validated one. What is known is that the integral RPP (IRPP) model is insufficient for them. The alpha law fits FinFET angular data, but its rates have not yet been validated (section 7 describes how that could be done). Until a better model exists, this is what we have: treat the rate as the best available estimate, with the cosine law rate beside it, not as a settled answer.

The model: σ(L, θ, φ) = α σN(L / α), with α² = (A² cos²φ + B² sin²φ) sin²θ + cos²θ. A = B = 0 is the cosine law. A = B = 1 is isotropic. A or B above 1 is the fin regime, where the effective LET falls with tilt and so does the cross section near threshold. The law, its plotting format and the rate integral are due to Larry Edmonds of the Jet Propulsion Laboratory (IEEE Transactions on Nuclear Science 49(3), 1522, 2002), the automated search and the A, B above one regime to J. D. Patterson and Edmonds (RADECS 2002); this tool implements them and applies them to non planar elements. The bootstrap and its confidence intervals (Efron's method, after the Monte Carlo studies of Ladbury and Hansen), the Weibull option (Edmonds' DIAL_W variant) and the interpolated LET grid are additions made for this site with Claude, Anthropic's AI model, under the direction of G. Allen (Space RHA, 2026) and are not part of Edmonds' method. Full derivation, the campaign design guidance and the rate integral are on the tool page. Two other models run alongside on the same data: HICUP, the rectangular parallelepiped of Connell, Sexton and Prinja (section 5), and Edmonds' dual-node lens model of JPL Publication 11-6 for DICE and other cells that need two nodes to collect charge (section 6).

2. Entering data

3. Reading the results

4. Rates and the new Weibulls

5. The HICUP comparison

The same exposures are fitted with HICUP, the rectangular parallelepiped model of Connell, Sexton and Prinja (Sandia, 1995): a box l by w by h with a funnel length, the exact chord length distribution through it for every direction, and a Weibull distributed critical energy. It runs with the analysis unless switched off.

6. The dual-node model

A DICE latch, or any cell hardened so that no single node can flip it, upsets only when two particular nodes collect their critical charge from the same ion. Such data violate the rule every single node model obeys (the integral of sigma over LET squared is the same in every direction), so neither the alpha law nor HICUP can fit them at any parameter values. Edmonds' dual-node model (JPL Publication 11-6, 2011) keeps the alpha law for each node, turns the two upset regions into circles in a transformed plane and takes the cross section to be the lens the circles share; their center distance carries the node separation T, a vertical offset h and the beam direction. The fit runs alongside the others when it is switched on.

7. Validating the method on a new device

The alpha law with A or B above one fits FinFET angular data well; it has not yet been shown to predict a flight rate. The tool is built to close that gap one measurement at a time. Fit on the runs you have, read the next measurements panel, which ranks unmeasured directions by how sharply they separate the alpha and cosine laws among runs that can reach a hundred counts in a practical fluence, go and measure the top one or two, then paste them in with hold out ticked. If the pulls are inside about two, the prediction held. Do that on a few parts and the case for the method makes itself. The alternative, a flight experiment in a cosmic ray dominated orbit with enough bits to count, is the definitive test but is rarely available.

8. Caveats

9. References

Edmonds, L. D., A Method for Correcting Cosine-Law Errors in SEU Test Data, IEEE Transactions on Nuclear Science 49(3), 1522, 2002. · Patterson, J. D. and Edmonds, L. D., Automating the Modeling of the SEE Cross Section's Angular Dependence, RADECS Workshop, 2002. · Edmonds, L. D., SEU Cross Sections Derived from a Diffusion Analysis, IEEE Transactions on Nuclear Science 43(6), 3207, 1996. · Kobayashi, D. and Ikuta, A., A Simple SEU-Rate Equation Derived From an Exponential Cross-Section Curve Approximation, IEEE Transactions on Nuclear Science 73(5), 1979, 2026. · Nsengiyumva, P. and others, Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies, IEEE Transactions on Nuclear Science 65(1), 223, 2018. · Zhang, H. and others, Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology, IEEE Transactions on Nuclear Science 64(1), 491, 2017. · Tylka, A. J. and others, CREME96, IEEE Transactions on Nuclear Science 44(6), 2150, 1997. · Connell, L. W., Sexton, F. W. and Prinja, A. K., Further Development of the Heavy Ion Cross Section for Single Event Upset Model (HICUP), IEEE Transactions on Nuclear Science 42(6), 2026, 1995. · Connell, L. W., Sexton, F. W., McDaniel, P. J. and Prinja, A. K., The HIC-UP-TS Model, IEEE Transactions on Nuclear Science 43(6), 2814, 1996. · Edmonds, L. D., Recommendations Regarding the Use of CREME96 for Heavy-Ion SEU Rate Calculations, JPL, 2005. · Edmonds, L. D., Estimates of SEU Rates from Heavy Ions in Devices Exhibiting Dual-Node Susceptibility, JPL Publication 11-6, 2011. · Calin, T., Nicolaidis, M. and Velazco, R., Upset Hardened Memory Design for Submicron CMOS Technology, IEEE Transactions on Nuclear Science 43(6), 2874, 1996.

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