Preliminary analysis aid. Check the result against your own analysis and, where needed, a test on the intended part. Full disclaimer.
1. What it shows
For each of 22 device families, the fraction of part types in the site's radiation test corpus that had a parameter reported
outside its datasheet limit by a given total dose, as a survival curve against dose with bootstrap bands, at the standard test rate,
an intermediate rate and the low rate; the same split by grade, test era and process; how often part types were flagged as enhanced
at low dose rate and the distribution of the enhancement factor; and for optocouplers the CTR retention against 1 MeV neutron
equivalent fluence with a fitted damage constant and a calculator. Release TDHP 2026-09, built from 6,639 records on 3,772 part
type and dose rate combinations.
In one line: what history says about parts like yours before your part has been
tested, with the counts and bands that say how much history there is.
2. Inputs
- Device family. Families come from a keyword mapping of the device type field. Pick the one your part's function
belongs to; the part type count is shown in the list.
- Dose rate class. Standard (1 rad/s and above, plus records with no rate stated), intermediate (0.01 to 1 rad/s),
low (10 mrad/s and below, including elevated temperature tests). For a space mission the low rate curve is the relevant one for
bipolar and BiCMOS linear parts; for CMOS the standard rate is the accepted test.
- Subset. COTS, Mil and Hi-Rel, or rad hard and QML, available for the standard rate only.
- Mission dose and design margin. Their product is the specification dose the headline number is read at.
- Optocoupler inputs. Particle, proton energy, fluence, LED type if known, and the minimum CTR fraction the circuit
tolerates. Neutron input is taken as 1 MeV equivalent directly.
3. Calculation
- Observations. One per part type per dose rate class: highest dose passed, lowest dose with any parameter out of
limit. Failures recorded at 0 krad and values below 0.5 krad are dropped as pre irradiation out of spec; doses above 3000 krad are
right censored at 3000.
- Curve. Turnbull nonparametric maximum likelihood survival on a fixed dose grid; log interpolated for readout;
curves stop at 1000 krad because the last grid cell holds the censored remainder.
- Headline fraction. One minus the survival at the specification dose. The band is the 5 to 95 percent bootstrap
over part types (100 resamples), computed for family level curves.
- Lognormal summary. Interval censored maximum likelihood, shrunk toward the all-family fit with weight n/(n + 8);
shown as an overlay and quoted as a median. Headline numbers do not use it.
- ELDRS. Susceptibility fraction with a Jeffreys Beta prior among part types with a recorded determination.
Enhancement factor is the standard rate failure dose over the low rate failure dose for part types with both; lower bounds for part
types that failed at low rate only are listed separately.
- CTR. Retention statements converted to 1 MeV neutron equivalent fluence by silicon NIEL and fitted to
CTR/CTR0 = 1/(1 + K Φeq) with lognormal K; median and 10th and 90th percentile curves; the calculator
inverts the law for the fluence at which the retention reaches your minimum.
4. Assumptions
- "Out of limit" means what the test author judged against the datasheet or SMD limits. For a derated application the curves are
conservative.
- The corpus is what people chose to test and publish. Failure fractions are upper bounds for a random catalog part and fair
estimates for a part somebody intended to fly.
- Records with no dose rate stated are treated as standard rate tests.
- Publication year stands in for design era.
- Silicon NIEL scales GaAs and AlGaAs LED damage with energy well enough for a prior; it is not the right NIEL for the LED.
5. Implementation notes
- The published asset contains fitted parameters, grid survival values, bands and aggregate counts. Internal records are counted as
internal and never identified; the anonymous optocoupler points carry only a fluence and a fraction.
- Families with fewer than five part types are omitted; the comparison chart requires ten.
- The build script, the family mapping, the dose rate parser and the fits are in one Python file and re-run against the database
when the corpus grows; the release name changes when they do.
- The lot acceptance report generator evaluates test data on its own; these priors are for the decision before the test.
6. Limitations
- First parameter out of limit only. How far parameters drift, which a derated design needs, is a separate extraction not yet run.
- The optocoupler prior rests on 19 statements with a two decade spread in the damage constant; it says test, not how the test
will come out.
- The ELDRS susceptibility fraction is biased upward by who gets tested at low rate; the enhancement factors are not.
- The intermediate rate class is a mixed population. The family mapper is keyword based and misfiles some parts.
- Grade, era and process subsets carry point estimates without bands.
7. References
Turnbull, B. W., The Empirical Distribution Function with Arbitrarily Grouped, Censored and Truncated Data, Journal of the Royal
Statistical Society B 38(3), 290, 1976. · Pease, R. L., Schrimpf, R. D. and Fleetwood, D. M., ELDRS in Bipolar Linear
Circuits: A Review, IEEE Transactions on Nuclear Science 56(4), 1894, 2009. · Johnston, A. H., Swift, G. M. and Rax, B. G.,
Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated Circuits, IEEE Transactions on Nuclear Science 41(6),
2427, 1994. · Rax, B. G., Lee, C. I., Johnston, A. H. and Barnes, C. E., Total Dose and Proton Damage in Optocouplers, IEEE
Transactions on Nuclear Science 43(6), 3167, 1996. · Johnston, A. H. and Miyahira, T. F., Characterization of Proton Damage in
Light-Emitting Diodes, IEEE Transactions on Nuclear Science 47(6), 2500, 2000. · Jun, I. and others, Proton Nonionizing
Energy Loss (NIEL) for Device Applications, IEEE Transactions on Nuclear Science 50(6), 1924, 2003. · Nguyen, D. N. and others,
Radiation Effects on Advanced Flash Memories, IEEE Transactions on Nuclear Science 46(6), 1744, 1999. · MIL-STD-883 Test
Method 1019, current revision.
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